Title :
Particle contaminations in LPCVD polysilicon
Author :
Chen, W.H. ; Chao, T.S. ; Liu, Yongning ; Chou, K.S. ; Lei, T.F.
Author_Institution :
Nat. Nano Device Lab., Hsinchu
fDate :
2/2/1995 12:00:00 AM
Abstract :
Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduces these surface defects
Keywords :
atomic force microscopy; chemical vapour deposition; elemental semiconductors; impurities; scanning electron microscopy; semiconductor growth; silicon; AFM; LPCVD polysilicon; SEM; Si; flow rate; gas injection; multiple-hole injector; orthogonal array L8 experiment; particle contamination; particle formation suppression; poly-Si films; pressure; surface defects reduction; temperature;
Journal_Title :
Electronics Letters
