DocumentCode
1239053
Title
Particle contaminations in LPCVD polysilicon
Author
Chen, W.H. ; Chao, T.S. ; Liu, Yongning ; Chou, K.S. ; Lei, T.F.
Author_Institution
Nat. Nano Device Lab., Hsinchu
Volume
31
Issue
3
fYear
1995
fDate
2/2/1995 12:00:00 AM
Firstpage
239
Lastpage
241
Abstract
Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduces these surface defects
Keywords
atomic force microscopy; chemical vapour deposition; elemental semiconductors; impurities; scanning electron microscopy; semiconductor growth; silicon; AFM; LPCVD polysilicon; SEM; Si; flow rate; gas injection; multiple-hole injector; orthogonal array L8 experiment; particle contamination; particle formation suppression; poly-Si films; pressure; surface defects reduction; temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
362621
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