• DocumentCode
    1239283
  • Title

    Effect of illumination uniformity on GaAs photoconductive switches

  • Author

    Donaldson, William R. ; Mu, Liyue

  • Author_Institution
    Lab. for Laser Energetics, Rochester Univ., NY, USA
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    12/1/1994 12:00:00 AM
  • Firstpage
    2866
  • Lastpage
    2874
  • Abstract
    The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with our electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density. Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure. The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency
  • Keywords
    III-V semiconductors; electric fields; gallium arsenide; integrated optics; optical switches; photoconducting devices; photoconducting switches; transmission line theory; 1 ns; 2 ns; GaAs; GaAs photoconductive switches; asymmetric illumination schemes; discrete elements; dynamic behavior; electric fields; electric-field enhancements; electro-optic imaging system; illumination uniformity; longitudinal variation; low photo-carrier density; nonuniform transverse structure; optical illumination; spatial distribution; switch behavior; symmetric illumination schemes; transmission line; transmission-line model; Conductivity; Gallium arsenide; Lighting; Nonlinear optics; Optical imaging; Optical pulses; Optical switches; Photoconductivity; Power transmission lines; Ultrafast optics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.362723
  • Filename
    362723