Novel electrically controlled rapidly wavelength selective photodetection using MSMs

Author

Chen, Ray ; Miller, David A B ; Ma, Kai ; Harris, James S., Jr.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

11

Issue

1

fYear

2005

Firstpage

184

Lastpage

189

Abstract

A novel electrically controlled tunable metal-semiconductor-metal (MSM) photodetector is introduced and experimentally demonstrated with 2.5-ns wavelength-switching access time on a GaAs chip for switching between two wavelengths. This detector has a demonstrated 20.1-dB ON/OFF contrast ratio between the selected and the rejected wavelength and can resolve 179-GHz spaced wavelength-division multiplexing channels. In addition, device wavelength switching is achieved with a differential input voltage swing of ±1.65 V. This low bias voltage makes it compatible with complementary metal-oxide semiconductor (CMOS) control electronics for rapid switching.

Keywords

channel spacing; electro-optical switches; metal-semiconductor-metal structures; optical communication equipment; optical tuning; photodetectors; wavelength division multiplexing; 179 GHz; 2.5 ns; GaAs chip; MSM; channel spacing; complementary metal-oxide semiconductor control electronics; metal-semiconductor-metal photodetector; on/off contrast ratio; wavelength division multiplexing; wavelength selective photodetection; wavelength-switching access time; Filters; Interference; Low voltage; MOS devices; Optical beams; Optical fiber networks; Optical receivers; Photodetectors; Switches; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2004.841706

Filename

1395905