Experimental observation of resonant modes in GaInAsP microsquare resonators

Author

Yong-Zhen Huang ; Qin Chen ; Wei-Hua Guo ; Li-Juan Yu

Author_Institution

State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China

Volume

17

Issue

12

fYear

2005

Firstpage

2589

Lastpage

2591

Abstract

GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 μm. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.

Keywords

III-V semiconductors; Q-factor; etching; finite difference time-domain analysis; gallium compounds; indium compounds; laser modes; microcavity lasers; optical fabrication; photoluminescence; GaInAsP resonators; GaInAsP-InP; InP pedestals; Q-factors; finite-difference time-domain simulation; laser resonators; light ray method; microlasers; microsquare resonators; photoluminescence; resonant modes; two-step chemical etching; whispering-gallery-like modes; Etching; Fiber lasers; Finite difference methods; Indium phosphide; Laboratories; Laser modes; Microcavities; Photoluminescence; Resonance; Time domain analysis; GaInAsP–InP; laser mode; laser resonators; microlasers; microresonators; photoluminescence (PL); square cavity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.859514

Filename

1542158