Title :
A low-distortion K-band GaAs power FET
Author :
Tan, Tun S. ; Kotzebue, Ken ; Braun, David M. ; Centanni, Jim ; Mcquate, Dave
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
A K-band low-distortion GaAs power MESFET was developed by incorporating a pulse-type channel doping profile using molecular-beam-epitaxial technology and a novel 0.3-μm T-shaped gate. The low-distortion FETs offer about 10 to 15 dBc improvement in second-harmonic distortion compared to devices fabricated on a uniformity doped active layer. Significantly larger power load-pull contours are obtained with the low-distortion devices, indicating the improved linearity of these devices. In an 8-20-GHz single-stage broad-band amplifier, up to 10 dBc improvement in harmonic performance was achieved using the low-distortion device. This low-distortion device exhibits very linear transconductance as a function of the gate bias. A typical 750-μm-gate-width device is capable of 26 dBm of output power with 6 dB of gain, and power-added efficiency in excess of 35% when measured at 18 GHz. At 25 GHz, the device is capable of 24 dBm of output power with 5 dB associated gain
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; solid-state microwave devices; 0.3 micron; 35 percent; 5 to 6 dB; 750 micron; 8 to 25 GHz; GaAs; III-V semiconductors; K-band; MESFET; SHF; T-shaped gate; linear transconductance; low-distortion devices; microwave device; molecular-beam-epitaxial technology; power FET; power-added efficiency; pulse-type channel doping profile; second-harmonic distortion; Doping profiles; FETs; Gain; Gallium arsenide; K-band; Linearity; MESFETs; Power amplifiers; Power generation; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
