Title :
A 210-GHz bandwidth electrooptic sampler for large signal characterization of InP-based components
Author :
Joulaud, L. ; Mangeney, J. ; Chimot, N. ; Crozat, P. ; Lourtioz, J.M. ; Boukari, C. ; Riet, M. ; Lefevre, R.
Author_Institution :
Inst. d´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
We propose an electrooptic sampler at 1.55 μm (wavelength), which uses an ion-irradiated InP-based photoconductor for the optical-to-electrical conversion and a fiber-mounted LiTaO3 crystal as the electric-field sensor. A measurement bandwidth of 210 GHz is obtained with a signal-to-noise ratio higher than 17 dB. These results are found to be independent of the amplitude of the 2.1-ps excitation pulse, which reaches values as high as 0.81 V. Large signal characterization of InP-based components are thus allowed. The performance of our system is validated by test measurements performed on coplanar waveguides made on semi-insulating InP substrates.
Keywords :
III-V semiconductors; coplanar waveguides; electric sensing devices; electro-optical devices; indium compounds; lithium compounds; optical planar waveguides; photoconducting devices; photoconducting materials; 0.81 V; 1.55 mum; 2.1 ps; 210 GHz; InP; InP-based components; LiTaO/sub 3 /crystal; coplanar waveguides; electric-field sensor; electrooptic sampler; ion-irradiated InP-based photoconductor; optical-to-electrical conversion; Bandwidth; Electrooptic devices; Optical fiber sensors; Optical pulses; Optical sensors; Photoconductivity; Sensor phenomena and characterization; Signal to noise ratio; Wavelength conversion; Wavelength measurement; Coplanar waveguides (CPWs); optoelectronic devices; photoconducting devices; time-domain measurements;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.859499
