Title :
A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
Author :
Sidhu, R. ; Ning Duan ; Campbell, J.C. ; Holmes, A.L., Jr.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Texas, Austin, TX, USA
Abstract :
We report a photodiode on InP substrate with a cutoff wavelength of 2.39 μm and peak room-temperature external quantum efficiency of 43% at 2.23 μm. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6×10/sup 10/ cm/spl radic/HzW/sup -1/ at 200 K.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; photodiodes; quantum well devices; semiconductor device measurement; semiconductor quantum wells; 2.23 mum; 2.39 mum; 200 K; 43 percent; GaInAs-GaAsSb; InP; InP substrate; external quantum efficiency; lattice-matched GaInAs-GaAsSb type-II quantum wells; peak detectivity; photodiode; Dark current; Electromagnetic wave absorption; Indium phosphide; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Optical imaging; Photodetectors; Photodiodes; Temperature; Dark current; detectivity; infrared detectors; mid-wavelength infrared (MWIR); photodetectors; photodiodes; quantum wells (QWs); type-II quantum wells (QWs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.859163
