Proton damage effects in an EEV CCD imager

Author

Hopkinson, G.R. ; Chlebek, Ch

Author_Institution

Sira Ltd., Chislehurst, UK

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1865

Lastpage

1871

Abstract

A three-phase CCD (charge-coupled device) has been irradiated by 40-MeV protons up to a fluence of 3×10⁸ p/cm². Dark charge spikes appeared, but these were smaller than those previously reported for virtual-phase CCDs. Dark charge maps were obtained at several temperatures. The larger spikes showed erratic temperature behavior, whereas the smaller ones decreased in size as the temperatures decreased, but at a rate slower than the mean dark charge level. Possible mechanisms are discussed. The present study arose from the need to consider the performance of CCD-based star trackers used as part of the attitude measurement and control system of the West German Roentgen Satellite (ROSAT) X-ray astronomy mission

Keywords

CCD image sensors; X-ray astronomy; astronomical techniques; proton effects; 40 MeV; CCD-based star trackers; EEV CCD imager; ROSAT X-ray astronomy mission; Roentgen Satellite X-ray astronomy mission; attitude measurement; control system; dark charge level; dark charge spikes; proton damage effects; proton irradiation; three phase charge coupled device; Astronomy; Charge coupled devices; Electrons; Instruments; Ionization; Particle tracking; Protons; Silicon; Temperature sensors; X-ray imaging;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45380

Filename

45380