Title :
Characteristics of a high-speed passively mode-locked surface-emitting semiconductor InGaAs laser diode
Author :
Zhang, Qiang ; Jasim, Khalil ; Nurmikko, Arto V. ; Ippen, Erich ; Mooradian, Aram ; Carey, Glen ; Ha, Wonill
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
We have studied the performance of the recently demonstrated high-speed passively mode-locked 980-nm vertical cavity diode lasers (pulsewidth down to τp∼15 ps, repetition rate up to 15 GHz) by investigating the dynamics of the saturable p-i-n multiple quantum well InGaAs absorber. The impact of the absorber on the noise characteristics of these new compact short pulse sources is also reported.
Keywords :
high-speed optical techniques; laser cavity resonators; laser mode locking; laser noise; optical saturable absorption; p-i-n photodiodes; quantum well lasers; semiconductor device noise; surface emitting lasers; 15 GHz; 15 ps; 980 nm; InGaAs; InGaAs absorber; InGaAs laser; compact pulse sources; high-speed laser; laser diode; noise characteristics; p-i-n multiple quantum well absorber; passively mode-locked laser; saturable absorber; semiconductor laser; short pulse sources; surface emitting laser; vertical cavity diode lasers; Diode lasers; Indium gallium arsenide; Laser mode locking; Optical noise; Optical pulses; Optical surface waves; P-i-n diodes; PIN photodiodes; Surface emitting lasers; Vertical cavity surface emitting lasers; Charge carrier processes; mode-locked lasers; optical noise; semiconductor lasers; surface-emitting lasers; ultrafast measurements;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.841024
