DocumentCode
1240114
Title
660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle
Author
Cho, Soohaeng ; Park, YongJo ; Kim, Youngmin
Author_Institution
Photonics Program Team, Samsung Adv. Inst. of Technol., Gyeonggi-Do, South Korea
Volume
17
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
534
Lastpage
536
Abstract
We propose a new layer design for 660-nm GaInP-AlGaInP quantum-well laser diodes employing a two-step n-cladding layer and demonstrate the feasibility of achieving a reduced vertical beam divergence angle of as low as 14.8° with a relatively small decrease in the optical confinement factor by theoretical simulations and experimental observations.
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium compounds; indium compounds; laser beams; quantum well lasers; 660 nm; GaInP-AlGaInP; GaInP-AlGaInP laser; laser diode; optical confinement factor; quantum-well laser; reduced vertical beam divergence angle; two-step n-cladding layer; Indium phosphide; Laser beams; Optical buffering; Optical design; Optical recording; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor diodes; Laser beams; quantum-well (QW) lasers; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2004.842324
Filename
1396005
Link To Document