Title :
Ultrafast Raman Pulses in SOI Optical Waveguides for Nonlinear Signal Processing
Author :
De Leonardis, Francesco ; Passaro, Vittorio M N
Author_Institution :
Dipt. di Ing. dell´´Ambiente e per lo Sviluppo Sostenibile, Politec. di Bari, Taranto
Abstract :
Nonlinear optical signal processing by ultrafast Raman pulses in silicon-on-insulator rib waveguides is theoretically investigated in this paper. Stimulated Raman scattering, two-photon absorption, free carrier dispersion, self- and cross-phase-modulation-induced by Kerr effect, walk-off, group velocity dispersion, pump depletion, self-steeping, and polarization coupling are taken into account by a very general modeling under subpicosecond regime. Raman amplification, multiwavelength conversion, soliton formation, and pulse compression are presented and discussed. Finally, some simulations for generation of higher order Stokes pulses in mid-IR region are given.
Keywords :
integrated optoelectronics; optical Kerr effect; optical pulse compression; optical pumping; optical solitons; optical waveguides; optical wavelength conversion; self-phase modulation; silicon-on-insulator; stimulated Raman scattering; two-photon processes; Kerr effect; Raman amplification; Si; Stokes pulses; cross-phase-modulation; free carrier dispersion; group velocity dispersion; multiwavelength conversion; nonlinear optical signal processing; polarization coupling; pulse compression; pump depletion; self-phase-modulation; self-steeping; silicon-on-insulator rib waveguides; soliton formation; stimulated Raman scattering; two- photon absorption; ultrafast Raman pulses; Dispersion; Nonlinear optics; Optical pulses; Optical pumping; Optical signal processing; Optical waveguide theory; Optical waveguides; Pulse amplifiers; Stimulated emission; Ultrafast optics; Integrated optics; Raman scattering; nonlinear optics; optical signal processing; optical solitons; pulse amplifiers; silicon-on-insulator (SOI) technology;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.918311