Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

Author

Liguang Zheng ; Xiong Zhang ; Yuping Zeng ; Tatavarti, S.R. ; Watkins, S.P. ; Bolognesi, C.R. ; Demiguel, S. ; Campbell, J.C.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

Volume

17

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

651

Lastpage

653

Abstract

We demonstrate staggered ("type-II") lineup lattice-matched GaAs/sub 0.51/Sb/sub 0.49/-InP unitraveling carrier photodiodes (UTC-PDs) for application near 1.55 μm. The GaAsSb absorbing layer conduction band edge lines up /spl Delta/E/sub C/=0.11 eV above that of InP, and hence, allows the direct injection of photogenerated electrons into an InP collector-without any need for compositional grading around the GaAsSb-InP interface-thus simplifying epitaxial growth and device fabrication. InP-GaAsSb UTC-PDs show low dark current levels, and measurable bandwidths are limited by the test equipment. A transit-limited bandwidth of 105 GHz for a PD with a 1000-GaAsSb absorption layer (C:5×10/sup 18//cm³) and a 2000 InP collector is inferred from the variation of photoresponse bandwidth with device area.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; photodiodes; 105 GHz; GaAsSb-InP; UTC-PD; absorbing layer conduction band edge lines; dark current; high-speed staggered line-up GaAsSb-InP unitravelling carrier photodiodes; photoresponse bandwidth; transit-limited bandwidth; Bandwidth; Current measurement; Dark current; Electrons; Epitaxial growth; Fabrication; Gallium arsenide; Indium phosphide; Photodiodes; Test equipment; GaAsSb; InP; unitraveling carrier photodiode (UTC-PD); unitraveling photodiode;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.842343

Filename

1396044