Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current

Author

Mahon, Simon J. ; Skellern, David J.

Author_Institution

Div. of Radiophys., CSIRO, Epping, NSW, Australia

Volume

43

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

213

Lastpage

216

Abstract

We present refinements to a previously validated HEMT model that improves the model´s accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-μm-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device´s d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of ~5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length

Keywords

S-parameters; electric current; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0.4 micron; 1 to 50 GHz; DC drain current; HEMT model; HEMT wafer structure; MM-wave device; bias dependence; drain bias; drain dependence; gate dependence; physical gate length; pseudomorphic HEMT; small-signal S-parameters; Capacitance; Electrons; Frequency measurement; HEMTs; PHEMTs; Predictive models; Scattering parameters; Semiconductor device modeling; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.362988

Filename

362988