Title :
Consistent small-signal and large-signal extraction techniques for heterojunction FET´s
Author :
Jansen, Ph. ; Schreurs, D. ; De Raedt, W. ; Nauwelaers, B. ; Van Rossum, M.
Author_Institution :
Interuniv. Micro Electron. Center, Leuven, Belgium
fDate :
1/1/1995 12:00:00 AM
Abstract :
A new method is reported to extract large-signal current and charge sources from the small-signal S-parameters of pseudomorphic heterojunction field effect transistors (PHFET´s). This method produces a new intrinsic small-signal equivalent circuit topology with less constraints concerning the extraction of the large-signal current and charge sources. The main advantage of this new topology is charge conservation. The S-parameter measurements of a 0.2-μm PHFET agrees well with the small-signal S-parameter data, obtained after evaluation of the new large-signal model at different bias points
Keywords :
S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; 0.2 micron; PHFET; S-parameter measurements; bias points; charge conservation; equivalent circuit topology; large-signal extraction techniques; large-signal model; microwave FETs; pseudomorphic heterojunction field effect transistors; small-signal extraction techniques; Circuit topology; Equivalent circuits; FETs; HEMTs; Heterojunctions; Integrated circuit modeling; MMICs; MODFETs; Scattering parameters; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
