• DocumentCode
    1240742
  • Title

    Microstructure of Nd-Ga-O3 new seed layer for LPE growth of YBCO film

  • Author

    Kim, SeokBeom ; Yoo, Sang-Im ; Yamada, Yasuji

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
  • Volume
    13
  • Issue
    2
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    2571
  • Lastpage
    2574
  • Abstract
    The microstructure and crystallization mechanism of NdGaO3 (NGO) new seed layer for liquid phase epitaxy (LPE) growth of YBa2Cu3O7-δ (YBCO) were revealed using high resolution SEM and TEM. NGO layer deposited by PLD at room temperature shows that very porous and columnar structure and this layer indicated amorphous by x-ray analysis. Amorphous NGO layer was crystallized with good in-plane and out of plane orientations keeping columnar structure by simple post annealing process. Biaxially aligned YBCO thick films were successfully fabricated on oriented novel porous NGO new seed layer. Although many cracks were observed for normally LPE grown YBCO films on NGO(110) single crystalline substrate, it was crack-free formed on porous NGO[100] film.
  • Keywords
    barium compounds; crystal microstructure; gallium compounds; high-temperature superconductors; liquid phase epitaxial growth; neodymium compounds; porous materials; pulsed laser deposition; scanning electron microscopy; superconducting epitaxial layers; superconducting tapes; transmission electron microscopy; yttrium compounds; LPE growth; NGO layer; Nd-Ga-O3 seed layer; NdGaO3; PLD; SEM; TEM; YBCO film; YBa2Cu3O7-δ; columnar structure; crystallization mechanism; crystallized; high temperature superconductor; liquid phase epitaxy; microstructure; porous structure; post annealing process; x-ray analysis; Amorphous materials; Annealing; Conducting materials; Crystallization; Materials science and technology; Microstructure; Substrates; Temperature; Thick films; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2003.811851
  • Filename
    1212141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1240742