Title :
(119) oriented Bi-2223 thin films grown on [100] NdGaO3 by MOCVD
Author :
Endo, K. ; Badica, P. ; Abe, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
fDate :
6/1/2003 12:00:00 AM
Abstract :
Orientation control of high Tc superconductors is essential for superior device performance, because the coherence length is longer along the non c-axis directions than along c-axis direction. In this study, we report on the first successful preparation of (119) oriented Bi-2223 films by MOCVD using [100] NdGaO3 substrates. Atomic force microscopy observations of the (119) Bi-2223 films are also reported. Our films have an in-plane aligned mountain-range-shaped surface morphology. This morphology is resulting from the epitaxial relationship between the (119) Bi-2223 film and [100] NdGaO3 substrate. Films exhibited a large in-plane anisotropy as revealed by resistivity measurements and surface morphology observations.
Keywords :
MOCVD; atomic force microscopy; bismuth compounds; calcium compounds; electrical resistivity; high-temperature superconductors; strontium compounds; substrates; superconducting epitaxial layers; superconducting thin films; surface morphology; (119) oriented Bi-2223 thin films; Bi2Sr2Ca2Cu3O10; MOCVD; NdGaO3; [100] NdGaO3; atomic force microscopy; coherence length; epitaxial relationship; high Tc superconductors; in-plane aligned mountain-range-shaped surface morphology; large in-plane anisotropy; orientation control; preparation; resistivity; surface morphology; Atomic force microscopy; Atomic layer deposition; MOCVD; Position control; Substrates; Superconducting devices; Superconducting films; Superconducting thin films; Surface morphology; Transistors;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.811963
