Title :
Epitaxial YBa2Cu3Oy thin films grown on silicon with a double buffer of Eu2CuO4/YSZ
Author :
Gao, J. ; Kang, L. ; Li, T.K. ; Cheung, Y.L. ; Yang, J.
Author_Institution :
Dept. of Phys., Univ. of Hong Kong, China
fDate :
6/1/2003 12:00:00 AM
Abstract :
We report a double buffer of Eu2CuO4 (ECO)/YSZ to improve the growth of YBa2Cu3Oy(YBCO) on Si wafer. The ECO buffer material possesses a very stable 214-T´ structure. It has excellent structural and chemical compatibilities with YBCO and YSZ. Our study showed that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using such a double buffer of ECO/YSZ. The grown films were characterized by grazing incidence X-ray reflection, rocking curve, SEM, TEM, and surface profiler. It was also found that such a double buffer could lead to a very smooth surface in the YBCO layer.
Keywords :
X-ray diffraction; barium compounds; high-temperature superconductors; scanning electron microscopy; superconducting epitaxial layers; superconductor-semiconductor boundaries; transmission electron microscopy; yttrium compounds; 214-T´ structure; ECO/YSZ double buffer layer; Eu2CuO4-ZrO2Y2O3; SEM; Si; TEM; YBCO thin film; YBa2Cu3O; crystalline structure; epitaxial growth; grazing incidence X-ray reflection; high temperature superconductor; rocking curve; silicon wafer; surface profiler; Crystallization; Dielectric substrates; Epitaxial growth; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Superconducting films; Surface morphology; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.811969
