Title :
Microstructure control in the growth of large area Tl-2212 thin films
Author :
Wu, Houzheng ; Speller, Susannah C. ; Pal, Srikanter ; Edwards, David J. ; Grovenor, Chris R M
Author_Institution :
Dept. of Mater., Univ. of Oxford, UK
fDate :
6/1/2003 12:00:00 AM
Abstract :
Large area high temperature superconducting thin films are needed for the implementation of a range of passive microwave devices. We have been investigating the critical processing issues that control the surface resistance values in 2 inch films grown on lanthanum aluminate substrates, including the possibility of batch processing wafers in a vertical geometry. We have shown that the microstructure of vertically-processed films shows a systematic variation in microstructure from top to bottom which can seriously degrade the uniformity of the superconducting properties. We have also used electron backscattered diffraction to analyze the fine-scale mosaic structure of thin films of varying thickness and processing conditions to show that the best surface resistance values are not found in films with the sharpest epitaxial relationship between the substrate and film. We propose an explanation for this counterintuitive observation based on how the films can relieve stresses generated during processing.
Keywords :
barium compounds; calcium compounds; electron backscattering; electron diffraction; high-frequency effects; high-temperature superconductors; internal stresses; microwave materials; superconducting thin films; surface resistance; thallium compounds; 2 inch; LaAlO4; Tl2Ba2CaCu2O8; batch processing; electron backscattered diffraction; film stress relief; high temperature superconducting thin film; large area Tl-2212 thin films; microstructure control; passive microwave devices; surface resistance; Lanthanum; Microstructure; Process control; Substrates; Superconducting films; Superconducting microwave devices; Superconducting thin films; Surface resistance; Temperature distribution; Transistors;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.812028