Title :
Pulse-doped diamond p-channel metal semiconductor field-effect transistor
Author :
Shiomi, H. ; Nishibayashi, Y. ; Toda, N. ; Shikata, S.-I.
Author_Institution :
Itami Res. Labs., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
Abstract :
A p-type diamond metal semiconductor field-effect transistor (MESFET) structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 μm and the gate width of 39 μm exhibits an extrinsic transconductance of 116 μS/mm with both pinch-off characteristics and current saturation.
Keywords :
Schottky gate field effect transistors; boron; diamond; doping profiles; elemental semiconductors; plasma CVD; 116 muS/mm; 39 micron; 4 micron; B pulse-doped layer; C:B; chemical vapor deposition; conducting channel; diamond FET; field-effect transistor; highly doped thin diamond active layer; microwave plasma assisted CVD; p-channel MESFET; undoped diamond buffer layer; undoped diamond cap layer; Boron; Buffer layers; Chemical vapor deposition; FETs; Impurities; MESFETs; Plasma temperature; Scattering; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
