Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs

Author

Chan, Yi-Jen ; Ming-Ta Kang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

16

Issue

1

fYear

1995

Firstpage

33

Lastpage

35

Abstract

The linearities of pseudomorphic heterostructure Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As doped-channel FETs (DCFETs) and HEMTs were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.<>

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; Al/sub 0.3/Ga/sub 0.7/As-In/sub 0.2/Ga/sub 0.8/As; DC testing; DCFET; HF power device application; HFET; RF testing; device linearity improvement; heterostructure doped-channel FETs; high current density; pseudomorphic heterostructure FET; Artificial intelligence; Breakdown voltage; Current density; Epitaxial layers; Gallium arsenide; HEMTs; Intrusion detection; Linearity; Microwave devices; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363208

Filename

363208