Title :
Recess dependent breakdown behavior of GaAs-HFETs
Author :
Geiger, D. ; Dickmann, J. ; Wölk, C. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices and Circuits, Ulm Univ., Germany
Abstract :
GaAs based HEMT devices were fabricated with a constant recess towards the source, whereas the recess width towards the drain was varied. While the off-state breakdown voltage has been improved by the use of a wide recess towards the drain, no dependence of the on-state breakdown on the recess configuration was observed. The constant breakdown voltage in the on-state is analysed by the feedback parameters obtained from an extraction of the small signal equivalent circuit. Although the extrinsic gate drain capacitance could be reduced by the use of a wider recess configuration, it is assumed that the intrinsic drift region is independent of the recess configuration.<>
Keywords :
III-V semiconductors; electric breakdown; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; GaAs; GaAs HFETs; HEMT devices; constant breakdown voltage; extrinsic gate drain capacitance; feedback parameters; offstate breakdown voltage; on-state breakdown; recess configuration; recess dependent breakdown behavior; recess width; small signal equivalent circuit; Breakdown voltage; Electric breakdown; Equivalent circuits; Frequency; Gallium arsenide; HEMTs; MODFETs; Parasitic capacitance; Shape; Signal analysis;
Journal_Title :
Electron Device Letters, IEEE
