Title :
A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs
Author :
Subramanian, S. ; Schulte, D. ; Ungier, L. ; Zhao, P. ; Plant, T.K. ; Arthur, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
We report the fabrication and performance of a novel, high gain photodetector. Basically, the device is a modulation-doped field effect transistor (MODFET) structure with its channel region made of low-temperature MBE-grown GaAs. It exhibits an excellent responsivity of 65 A/W at /spl sim/0.87 μm and 6.5 A/W at /spl perp/1.0 μm. In the sub-bandgap range (0.9-1.3 μm) the responsivity of this device is the highest ever reported, to our knowledge, for any GaAs-based device. Thus, the device appears to be ideally suited for applications requiring a high photodetection sensitivity, especially in the 1.3 μm wavelength region. Charge separation by the built-in field normal to the heterojunction plane is attributed to be responsible for the gain in the device.
Keywords :
gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; photodetectors; 0.87 to 1.3 micron; GaAs; MODFET structure; built-in field; channel region; charge separation; fabrication; heterojunction plane; high photodetection sensitivity; high-gain; low-temperature MBE-grown GaAs; modulation-doped field effect transistor; modulation-doped photodetector; Annealing; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Photodetectors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
