Formation and control of boron buried layers in silicon using an excimer laser

Author

Verma, G. ; Slaoui, A. ; Talwar, S. ; Sigmon, T.W.

Author_Institution

Dept. of Electr. Eng. and Appl. Phys., Oregon Graduate Inst. of Sci. & Technol., Portland, OR, USA

Volume

16

Issue

1

fYear

1995

Firstpage

14

Lastpage

16

Abstract

Buried layers have been shown to enhance performance of Si MOSFETs in the deep submicrometer regime. Epitaxial growth methods such as atomic layer doping or ion implantation are currently used for the formation of such doping profiles. In this work, we propose an alternative approach, using a XeCl (/spl lambda/=308 mn) pulsed excimer laser, for the fabrication of pulse-shaped B profiles in Si. This process affords simplicity, versatility, and independent control over the depth, width, and the height of the B buried layer.<>

Keywords

MOSFET; boron; buried layers; doping profiles; elemental semiconductors; excimer lasers; integrated circuit technology; laser materials processing; semiconductor doping; silicon; xenon compounds; 308 nm; B buried layers; Si MOSFETs; Si:B; XeCl; XeCl pulsed excimer laser; buried layer control; buried layer formation; deep submicrometer regime; fabrication method; pulse-shaped B profiles; Atomic beams; Atomic layer deposition; Boron; Doping profiles; Epitaxial growth; Ion implantation; MOSFETs; Optical pulses; Silicon; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363214

Filename

363214