Title :
Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current
Author :
Waldrop, J.R. ; Chang, M.F.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
We report an electrical characterisation of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the DC gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; negative resistance; 250 to 400 K; AlGaAs-GaAs; DC gain; HBT; NDR effect; electrical characterisation; emitter edge current; heterojunction bipolar transistors; negative differential output resistance; perimeter to area ratio; temperature range; Current density; Electric resistance; Electrical resistance measurement; Electromagnetic interference; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Substrates; Temperature; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
