Dual lateral channel emitter switched thyristor characteristics: dependence on floating emitter length

Author

Bhalla, Anup ; Chow, T.P.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

16

Issue

1

fYear

1995

Firstpage

5

Lastpage

7

Abstract

In this work, we have examined the forward drop and maximum controllable current of the dual lateral channel emitter switched thyristor as a function of floating emitter length. It is found that the forward drop at lower current densities decreases with increasing floating emitter length, but the trend is reversed at higher current densities. The maximum controllable current is found to decrease with increasing emitter length, and increase with applied negative gate bias. This indicates that turn-off is primarily accomplished by the p-channel MOSFET inherent in the structure. These trends have been verified experimentally on 600-V devices.<>

Keywords

MIS devices; MOS-controlled thyristors; current density; 600 V; applied negative gate bias; current densities; dual lateral channel thyristor; emitter switched thyristor; floating emitter length; forward drop; maximum controllable current; p-channel MOSFET; thyristor characteristics; Anodes; Cathodes; Charge carrier processes; Current density; Joining processes; Latches; MOSFET circuits; Physics; Threshold voltage; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363217

Filename

363217