Dual lateral channel emitter switched thyristor characteristics: dependence on floating emitter length

In this work, we have examined the forward drop and maximum controllable current of the dual lateral channel emitter switched thyristor as a function of floating emitter length. It is found that the forward drop at lower current densities decreases with increasing floating emitter length, but the trend is reversed at higher current densities. The maximum controllable current is found to decrease with increasing emitter length, and increase with applied negative gate bias. This indicates that turn-off is primarily accomplished by the p-channel MOSFET inherent in the structure. These trends have been verified experimentally on 600-V devices.<>