Title :
Grounded body SOI(GBSOI) nMOSFET by wafer bonding
Author :
Kang, Won-gu ; Lyu, Jong-Sun ; Kang, Sang-won ; Lee, Kwyro
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We have fabricated a grounded body silicon-on-insulator (GBSOI) nMOSFET by wafer bonding and etch back technology. The GBSOI has all the inherent advantages of SOI such as speed and radiation hardness, while such problems as the low breakdown voltage and kink effect are completely solved due to the p/sup +/ polysilicon grounded body. It also has high packing density because several SOI bodies and the ground line are connected via the p/sup +/ polysilicon layer buried under the channel region.<>
Keywords :
MOSFET; etching; silicon-on-insulator; wafer bonding; Si; etch back technology; grounded body SOI nMOSFET; high packing density; n-channel MOSFET; p/sup +/ polysilicon buried layer; radiation hardness; wafer bonding; Breakdown voltage; Dry etching; FETs; Fabrication; MOSFET circuits; Semiconductor materials; Silicon; Substrates; Threshold voltage; Wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
