Title :
A measurement method of the injection dependence of the conductivity mobility in silicon
Author :
Bellone, S. ; Persiano, G.V. ; Strollo, A.G.M.
Author_Institution :
Dept. of Inf. & Electr. Eng., Salerno Univ., Italy
fDate :
3/1/1995 12:00:00 AM
Abstract :
A new electrical method to measure the conductivity mobility as a function of the injection level is proposed in this paper. The measurement principle is based on the detection of the voltage drop appearing across a n/sup +/-n-n/sup +/ (p/sup +/-p-p/sup +/) structure when a current step is forced into it at a given injection level in the intermediate region. This is obtained by using a three-terminal test pattern consisting of p/sup +/, n/sup +/ layers realized on top of a n-n/sup +/ (p-p/sup +/) epitaxial wafer, where the p/sup +/-n-n/sup +/ (n/sup +/-p-p/sup +/) surface diode is forward biased to monitor the conductivity of the epilayer. The use of separate terminals for injection control and mobility measurement allows this technique to overcome some limitations presented by other electrical methods available in literature, Mobility values measured up to 2/spl middot/10/sup 17/ cm/sup -3/ are in good agreement with those predicted by the Dorkel and Leturcq´s model (1981).<>
Keywords :
carrier mobility; electric variables measurement; elemental semiconductors; silicon; Si; conductivity mobility; electrical method; forward biased surface diode; injection dependence; measurement method; n-n/sup +/ epitaxial wafer; n/sup +/-n-n/sup +/ structure; p-p/sup +/ epitaxial wafer; p/sup +/-p-p/sup +/ structure; three-terminal test pattern; voltage drop detection; Conductivity measurement; Current measurement; Density measurement; Electric variables measurement; Power engineering and energy; Pulse measurements; Semiconductor diodes; Silicon; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
