High-speed metal-semiconductor-metal photodiodes with Er-doped GaAs

Author

Sethi, S. ; Brock, T. ; Bhattacharya, P.K. ; Kim, Jung-Ho ; Williamson, S. ; Craig, D. ; Nees, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

16

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

106

Lastpage

108

Abstract

Very high-speed MSM photodiodes have been fabricated on Er-doped GaAs over a doping range of 10/sup 18/-10/sup 20/ cm/sup -3/. The impulse response (characterized by photoconductive sampling) of these diodes, with finger widths/spacings of 2 μm, has been found to be tunable over a range of about 3 ps-22 ps. Electro-optic sampling was used to characterize MSM diodes with finger widths/spacings of 0.5 μm and 1 μm on a sample with [Er]=10/sup 19/ cm/sup -3/, resulting in 3-dB bandwidths of 160 GHz and 140 GHz, respectively, corresponding to pulse widths of 2.7 ps and 3.3 ps. Correlation measurements were also done on the GaAs:Er samples, using an all-electronic Sampling Optical Temporal Analyzer (SOTA) structure.

Keywords

III-V semiconductors; erbium; gallium arsenide; metal-semiconductor-metal structures; photodiodes; semiconductor doping; transient response; 140 GHz; 160 GHz; 2.7 to 22 ps; Er-doped GaAs layers; GaAs:Er; electro-optic sampling; high-speed MSM photodiodes; impulse response; metal-semiconductor-metal photodiodes; photoconductive sampling; sampling optical temporal analyzer structure; Bandwidth; Diodes; Doping; Fingers; Gallium arsenide; Optical pulses; Photoconductivity; Photodiodes; Sampling methods; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363239

Filename

363239