DocumentCode
1241576
Title
2-D dopant profiling in VLSI devices using dopant-selective etching: an atomic force microscopy study
Author
Barrett, M. ; Dennis, M. ; Tiffin, D. ; Li, Y. ; Shih, C.K.
Author_Institution
Dept. of Phys., Texas Univ., Austin, TX, USA
Volume
16
Issue
3
fYear
1995
fDate
3/1/1995 12:00:00 AM
Firstpage
118
Lastpage
120
Abstract
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method.<>
Keywords
VLSI; atomic force microscopy; doping profiles; etching; integrated circuit measurement; semiconductor doping; 2D dopant profiling; AFM study; VLSI devices; atomic force microscopy; dopant profile mapping; dopant-selective etching; high spatial resolution; reliability; reproducibility; Atomic force microscopy; Doping; Dynamic range; Etching; Integrated circuit modeling; Reproducibility of results; Scanning probe microscopy; Silicon; Spatial resolution; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.363243
Filename
363243
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