Title :
Wideband CMOS Amplifier Design: Time-Domain Considerations
Author :
Walling, Jeffrey S. ; Shekhar, Sudip ; Allstot, David J.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA
Abstract :
Time-domain responses of wideband CMOS amplifiers using several inductive peaking techniques are presented. Transient performance considerations are described, including the effects of transistor parasitics on settling and edge rates. A combination of time-and frequency-domain performance is derived for a given bandwidth extension technique, and tradeoffs are discussed. Measured results for several high-speed high-gain single-stage amplifiers are presented in 0.18-mum CMOS, and a design strategy for multistage amplifiers is introduced. Finally, design and simulation results are presented for a multistage amplifier in 0.18-mum CMOS that attains a bandwidth of 22.7 GHz with 14.7-dB voltage gain, operates at 40 Gb/s, and consumes 93.6 mW.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; frequency-domain analysis; integrated circuit design; time-domain analysis; wideband amplifiers; bandwidth 22.7 GHz; bandwidth extension techniques; bit rate 40 Gbit/s; edge rate; frequency-domain performance; gain 14.7 dB; high-speed high-gain single-stage amplifiers; inductive peaking technique; multistage amplifiers; power 93.6 mW; settling rate; size 0.18 mum; time-domain performance; transistor parasitics effects; wideband CMOS amplifier; Bandwidth extension; T-coil; low power; peaking; setting time; transformer; transient; wireline;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2008.926977
