DocumentCode :
1241940
Title :
Modulation of quantum well lasers by short optical excitation: energy and spatial dependent effects
Author :
Tessler, N. ; Margalit, M. ; Michael, R. Ben ; Orenstein, M. ; Eisenstein, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
7
Issue :
1
fYear :
1995
Firstpage :
23
Lastpage :
25
Abstract :
We describe an energy-resolved and spatially selective time domain technique for optically excited measurements of diode laser modulation responses. We report application of the technique to a study of an InGaAs-GaAs quantum well laser. We emphasize the significance of the spatial characteristics of the excitation in resolving effects related either solely to the active region or to the entirety of the laser structure.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; optical modulation; quantum well lasers; InGaAs-GaAs; InGaAs-GaAs quantum well laser; active region; diode laser modulation responses; energy-resolved spatially selective time domain technique; laser structure; optically excited measurements; quantum well lasers; short optical excitation; spatial characteristics; spatial dependent effects; Diode lasers; Energy resolution; Laser excitation; Optical mixing; Optical modulation; Optical pulses; Optical waveguides; Quantum well lasers; Spatial resolution; Waveguide lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.363388
Filename :
363388
Link To Document :
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