• DocumentCode
    1241973
  • Title

    Bond-and-transfer scanning probe array for high-density data storage

  • Author

    Hsieh, Gen-Wen ; Tsai, Ching-Hsiang ; Lin, We-Chih ; Liang, Chao-Chiun ; Lee, Yu-Wen

  • Author_Institution
    Ind. Technol. & Res. Inst., Hsinchu, Taiwan
  • Volume
    41
  • Issue
    2
  • fYear
    2005
  • Firstpage
    989
  • Lastpage
    991
  • Abstract
    This paper reports a study of a wafer-level bond-and-transfer technique for scanning probe arrays and its future application on probe-based data storage. The bonding performance between sodium ion-rich glass and silicon-nitride-deposited silicon substrate has been characterized. The effects of tool pressure, bonding time, surface properties, and cleanliness were thoroughly discussed. Furthermore, the silicon-nitride-based scanning probe array with pyramidal tip and 1.5-μm-thick cantilevers were successful bonded and transferred to Pyrex 7740 substrate by the optimized condition of wafer-scale electrostatic force bonding and transferring processes. The nano-patterning capabilities of scanning probe array for high-density data storage were also discussed.
  • Keywords
    scanning probe microscopy; storage media; wafer bonding; Pyrex 7740 substrate; bond-and-transfer scanning probe array; bonding time; high-density data storage; probe-based data storage; silicon-nitride-based scanning probe array; silicon-nitride-deposited silicon substrate; sodium ion-rich glass; surface properties; tool pressure; wafer-level bond-and-transfer technique; wafer-scale electrostatic force bonding; Bonding forces; Electrostatics; Glass; Integrated circuit technology; Memory; Scanning probe microscopy; Silicon; Substrates; Temperature; Wafer bonding; Data storage; electrostatic force bonding; scanning probe array;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2004.842070
  • Filename
    1396279