DocumentCode :
1241973
Title :
Bond-and-transfer scanning probe array for high-density data storage
Author :
Hsieh, Gen-Wen ; Tsai, Ching-Hsiang ; Lin, We-Chih ; Liang, Chao-Chiun ; Lee, Yu-Wen
Author_Institution :
Ind. Technol. & Res. Inst., Hsinchu, Taiwan
Volume :
41
Issue :
2
fYear :
2005
Firstpage :
989
Lastpage :
991
Abstract :
This paper reports a study of a wafer-level bond-and-transfer technique for scanning probe arrays and its future application on probe-based data storage. The bonding performance between sodium ion-rich glass and silicon-nitride-deposited silicon substrate has been characterized. The effects of tool pressure, bonding time, surface properties, and cleanliness were thoroughly discussed. Furthermore, the silicon-nitride-based scanning probe array with pyramidal tip and 1.5-μm-thick cantilevers were successful bonded and transferred to Pyrex 7740 substrate by the optimized condition of wafer-scale electrostatic force bonding and transferring processes. The nano-patterning capabilities of scanning probe array for high-density data storage were also discussed.
Keywords :
scanning probe microscopy; storage media; wafer bonding; Pyrex 7740 substrate; bond-and-transfer scanning probe array; bonding time; high-density data storage; probe-based data storage; silicon-nitride-based scanning probe array; silicon-nitride-deposited silicon substrate; sodium ion-rich glass; surface properties; tool pressure; wafer-level bond-and-transfer technique; wafer-scale electrostatic force bonding; Bonding forces; Electrostatics; Glass; Integrated circuit technology; Memory; Scanning probe microscopy; Silicon; Substrates; Temperature; Wafer bonding; Data storage; electrostatic force bonding; scanning probe array;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2004.842070
Filename :
1396279
Link To Document :
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