Title :
InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation
Author :
Hurm, V. ; Benkhelifa, F. ; Driad, R. ; Lösch, R. ; Makon, R. ; Massler, H. ; Rosenzweig, J. ; Schlechtweg, M. ; Walcher, H.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Abstract :
A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor (DHBT) technology with an emitter size of 0.7 times 1 mum2. The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 231/1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.
Keywords :
bipolar analogue integrated circuits; distributed amplifiers; heterojunction bipolar transistors; optical communication equipment; optical modulation; random sequences; InP; InP DHBT-based distributed amplifier; bit rate 100 Gbit/s; double-hetero bipolar transistor; frequency 120 GHz; gain-bandwidth product; modulator driver operation; optical data communication system; pseudorandom bit sequence; voltage 2.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081274
