DocumentCode
1242012
Title
MgB2 superconducting films for bolometer applications
Author
Monticone, E. ; Rajteri, M. ; Portesi, C. ; Bodoardo, S. ; Gonnelli, R.S.
Author_Institution
Inst. Elettrotecnico Nazionale "Galileo Ferraris", Torino, Italy
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
3242
Lastpage
3244
Abstract
Thin superconducting films of MgB2 has been prepared on r-plane sapphire and silicon nitride (SiN) by ex-situ technique and co-deposition of B and Mg at several substrate temperatures with the aim to fabricate superconducting bolometers. MgB2 films on r-plane sapphire, realized by annealing of a B film at 890°C, show a Tc=38 K and RRR=2 while no transition has been observed for MgB2 films on SiN above 5 K treated in the same way. A reliable process of MgB2 growth on SiN with Tc between 27 K and 30 K and transition width of 0.5 K has been performed by co-deposition Mg and B and following annealing to 600°C.
Keywords
annealing; bolometers; magnesium compounds; sapphire; superconducting devices; superconducting thin films; type II superconductors; vacuum deposited coatings; 27 to 30 K; 38 K; 600 degC; 890 degC; Al2O3; MgB2; MgB2 superconducting films; annealing; bolometer applications; r-plane sapphire; Annealing; Bolometers; High temperature superconductors; Semiconductor films; Silicon compounds; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting photodetectors; Superconducting transition temperature;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.812211
Filename
1212316
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