DocumentCode :
1242073
Title :
Characterization of neutron radiation damage in GaAs
Author :
Griffin, P.J. ; Lazo, M.S. ; Luera, T.F. ; Kelly, J.G.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Volume :
36
Issue :
6
fYear :
1989
fDate :
12/1/1989 12:00:00 AM
Firstpage :
1937
Lastpage :
1944
Abstract :
The NJOY and MARLOWE computer codes are used to characterize neutron damage to GaAs. The fidelity of the components that affect the calculated GaAs damage is examined. The initial defect production is found to be a linear function of the damage energy. Recombination of Frenkel pairs and the distribution of vacancies introduce a nonlinearity in the residual defect population with respect to the damage energy. Consideration of the defect recombinations only provides a slight improvement in the agreement between measured and calculated damage in GaAs but does indicate the areas where more work is needed
Keywords :
Frenkel defects; III-V semiconductors; gallium arsenide; neutron effects; physics computing; vacancies (crystal); Frenkel pairs recombination; MARLOWE computer codes; NJOY computer code; damage energy; neutron radiation damage; residual defect population; semiconductor; vacancies distribution; Area measurement; Energy capture; Gallium arsenide; III-V semiconductor materials; Kinematics; Laboratories; Neutrons; Production; Scattering; Uncertainty;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.45390
Filename :
45390
Link To Document :
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