Sputter deposition conditions and penetration depth in NbN thin films

Author

Hu, Roger ; Kerber, George L. ; Luine, Jerome ; Ladizinsky, Eric ; Bulman, John

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

Volume

13

Issue

2

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

3288

Lastpage

3291

Abstract

NbN films have been reactively sputter deposited from a 15.24 cm Nb target using a variety of deposition conditions. Film penetration depth has been measured using Taber\´s parallel plate resonator technique. These measurements have been compared with penetration depth measurements obtained from SQUID measurements. Penetration depth results have also been correlated with film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The films have been deposited over a variety of substrates and buffer layers including oxidized Si, sapphire, and a variety of metal and metal nitride "seed" layers.

Keywords

X-ray diffraction; electrical resistivity; niobium compounds; penetration depth (superconductivity); sputtered coatings; superconducting thin films; superconducting transition temperature; NbN; NbN thin film; SQUID measurement; Taber parallel plate resonator technique; X-ray diffraction; buffer layer; electrical resistivity; oxidized Si substrate; penetration depth; reactive sputter deposition; resistance ratio; sapphire substrate; seed layer; superconducting transition temperature; Conductivity; Electrical resistance measurement; Niobium; SQUIDs; Semiconductor films; Sputtering; Substrates; Superconducting films; Superconducting transition temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2003.812227

Filename

1212328