DocumentCode :
1242098
Title :
Sputter deposition conditions and penetration depth in NbN thin films
Author :
Hu, Roger ; Kerber, George L. ; Luine, Jerome ; Ladizinsky, Eric ; Bulman, John
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Volume :
13
Issue :
2
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
3288
Lastpage :
3291
Abstract :
NbN films have been reactively sputter deposited from a 15.24 cm Nb target using a variety of deposition conditions. Film penetration depth has been measured using Taber\´s parallel plate resonator technique. These measurements have been compared with penetration depth measurements obtained from SQUID measurements. Penetration depth results have also been correlated with film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The films have been deposited over a variety of substrates and buffer layers including oxidized Si, sapphire, and a variety of metal and metal nitride "seed" layers.
Keywords :
X-ray diffraction; electrical resistivity; niobium compounds; penetration depth (superconductivity); sputtered coatings; superconducting thin films; superconducting transition temperature; NbN; NbN thin film; SQUID measurement; Taber parallel plate resonator technique; X-ray diffraction; buffer layer; electrical resistivity; oxidized Si substrate; penetration depth; reactive sputter deposition; resistance ratio; sapphire substrate; seed layer; superconducting transition temperature; Conductivity; Electrical resistance measurement; Niobium; SQUIDs; Semiconductor films; Sputtering; Substrates; Superconducting films; Superconducting transition temperature; X-ray diffraction;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2003.812227
Filename :
1212328
Link To Document :
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