DocumentCode
1242146
Title
Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 μm
Author
Bisping, D. ; Höfling, S. ; Pucicki, D. ; Fischer, M. ; Forchel, A.
Author_Institution
Tech. Phys., Univ. Wurzburg, Wurzburg
Volume
44
Issue
12
fYear
2008
Firstpage
737
Lastpage
738
Abstract
Room-temperature continuous-wave operation of distributed feedback GalnNAs quantum well laser diodes on GaAs in the 1.5 mum wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; GaAs; GaInNAs-GaAs; current 44 mA; distributed feedback laser diodes; external efficiency; laser threshold current; quantum well laser diodes; room-temperature continuous-wave operation; sidemode suppression ratio; single-mode emission; temperature 293 K to 298 K; wavelength 1.5 mum; wavelength 1486 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20081035
Filename
4539009
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