Title :
Three-dimensional integration of silicon-on-insulator RF amplifier
Author :
Chen, C.L. ; Chen, C.K. ; Yost, D.-R. ; Knecht, J.M. ; Wyatt, P.W. ; Burns, J.A. ; Warner, K. ; Gouker, P.M. ; Healey, P. ; Wheeler, B. ; Keast, C.L.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
Abstract :
An RF amplifier implemented by wafer-scale three-dimensional integration of three completely fabricated silicon-on-insulator wafers is demonstrated. The MOSFETs are on the top and bottom tier with middle-tier matching circuits. Measured amplifier performance agrees well with simulation and the footprint is approximately 40% smaller than the conventional 2D layout.
Keywords :
CMOS digital integrated circuits; MOSFET; radiofrequency amplifiers; radiofrequency integrated circuits; silicon-on-insulator; wafer-scale integration; MOSFET; Si-Jk; digital CMOS process; middle-tier matching circuits; silicon-on-insulator RF amplifier; wafer-scale three-dimensional integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080661
