• DocumentCode
    1242187
  • Title

    Three-dimensional integration of silicon-on-insulator RF amplifier

  • Author

    Chen, C.L. ; Chen, C.K. ; Yost, D.-R. ; Knecht, J.M. ; Wyatt, P.W. ; Burns, J.A. ; Warner, K. ; Gouker, P.M. ; Healey, P. ; Wheeler, B. ; Keast, C.L.

  • Author_Institution
    Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
  • Volume
    44
  • Issue
    12
  • fYear
    2008
  • Firstpage
    746
  • Lastpage
    747
  • Abstract
    An RF amplifier implemented by wafer-scale three-dimensional integration of three completely fabricated silicon-on-insulator wafers is demonstrated. The MOSFETs are on the top and bottom tier with middle-tier matching circuits. Measured amplifier performance agrees well with simulation and the footprint is approximately 40% smaller than the conventional 2D layout.
  • Keywords
    CMOS digital integrated circuits; MOSFET; radiofrequency amplifiers; radiofrequency integrated circuits; silicon-on-insulator; wafer-scale integration; MOSFET; Si-Jk; digital CMOS process; middle-tier matching circuits; silicon-on-insulator RF amplifier; wafer-scale three-dimensional integration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080661
  • Filename
    4539015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1242187