Application of a model for treatment of time dependent effects on irradiation of microelectronic devices

Author

Brown, Dennis B. ; Jenkins, William C. ; Johnston, Allan H.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1954

Lastpage

1962

Abstract

A simple model for interpreting and extrapolating time-dependent effects in the irradiation of microelectronic devices is tested by fitting its predictions to published and previously unpublished experimental data. The goal is to evaluate the applicability of such a model to hardness assurance testing in cases where defect growth and annealing processes (time-dependent effects) are significant. Data are presented indicating hole annealing times varying by more than six orders of magnitude. The implications of the large variation in hole annealing times for hardness assurance testing are explored

Keywords

CMOS integrated circuits; annealing; insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; semiconductor device testing; CMOS transistors; annealing processes; defect growth; hardness assurance testing; hole annealing times; microelectronic device irradiation; time-dependent effects; Acceleration; Annealing; Electronic equipment testing; Extrapolation; Failure analysis; Ionizing radiation; Laboratories; Microelectronics; Proposals; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45392

Filename

45392