DocumentCode :
1242665
Title :
Analysis of corrugated quantum well structures for laser applications
Author :
Eliseev, P.G. ; Nabiev, R.F. ; Onishchenko, A.I.
Author_Institution :
P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia
Volume :
142
Issue :
1
fYear :
1995
fDate :
2/1/1995 12:00:00 AM
Firstpage :
2
Lastpage :
4
Abstract :
Ultrathin active layers with quantum well (QW) depth and/or width modulation in one or two lateral directions are considered. It is shown that modulation leads to a modification in the density of state (DOS) distribution and, hence is involved in working optical transitions. Such features of corrugated QW (CQW) can be suitable in laser structures for reducing the threshold carrier concentration, increasing the T0 parameter and stabilising the operation wavelength compared to ordinary quantum well structures. An advantage of these profiled QWs is the opportunity to use suitable properties of 1D and 0D objects without actually making these microstructures, but only profiling the planar QW
Keywords :
carrier density; quantum well lasers; corrugated quantum well structures; density of state distribution; laser applications; laser structures; lateral directions; operation wavelength; planar quantum well; profiling; quantum well depth modulation; quantum well width modulation; threshold carrier concentration; ultrathin active layers; working optical transitions;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19951672
Filename :
363572
Link To Document :
بازگشت