DocumentCode
1242857
Title
Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications
Author
Vilches, Antonio ; Loga, Rodney ; Rahal, Mouhamed ; Fobelets, Kristel ; Papavassiliou, Christos ; Hall, Trevor J.
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK
Volume
52
Issue
2
fYear
2005
Firstpage
102
Lastpage
106
Abstract
A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dBΩ, respectively, while driving a 100-fF load to TTL voltage levels.
Keywords
BiCMOS integrated circuits; amplifiers; integrated circuit interconnections; integrated optoelectronics; p-i-n photodiodes; 100 fF; BiCMOS; HBT-CMOS technology; Si; TTL voltage levels; monolithic large-signal transimpedance amplifier; multi-gigabit optoelectronic interconnect applications; p-i-n diode; short range optoelectronic interconnect applications; Bandwidth; CMOS logic circuits; CMOS technology; Feedback; Impedance; Integrated circuit interconnections; Operational amplifiers; Pulse amplifiers; Resistors; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2004.840111
Filename
1396411
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