• DocumentCode
    1242875
  • Title

    Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters

  • Author

    Sanchez, F. J Garcia ; Ortiz-Conde, A. ; Liou, J.J.

  • Author_Institution
    Dept. de Electronica, Univ. Simon Bolivar, Caracas, Venezuela
  • Volume
    31
  • Issue
    1
  • fYear
    1995
  • fDate
    1/5/1995 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode´s current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode´s single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance
  • Keywords
    MOSFET; semiconductor device models; semiconductor diodes; I/V experimental characteristics; MOSFET; diode quality factor; double-exponential diode model parameters; drain-body junction; parasitic series resistance; reverse currents; single-exponential model parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950030
  • Filename
    364283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1242875