Title :
Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters
Author :
Sanchez, F. J Garcia ; Ortiz-Conde, A. ; Liou, J.J.
Author_Institution :
Dept. de Electronica, Univ. Simon Bolivar, Caracas, Venezuela
fDate :
1/5/1995 12:00:00 AM
Abstract :
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode´s current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode´s single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance
Keywords :
MOSFET; semiconductor device models; semiconductor diodes; I/V experimental characteristics; MOSFET; diode quality factor; double-exponential diode model parameters; drain-body junction; parasitic series resistance; reverse currents; single-exponential model parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950030
