Transport and noise properties of ramp-edge junction

Author

Kim, H. ; Lee, C.W. ; Lee, T.W. ; Hwang, J.S. ; Hahn, T.S. ; Sung, G.Y. ; Kim, S.H. ; Kim, J.H.

Author_Institution

Yeungnam Univ., Kyungsan, South Korea

Volume

13

Issue

2

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

3738

Lastpage

3741

Abstract

We measured transport and noise properties of YBa₂Cu₃O_x ramp-edge junctions fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior. Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are anti-phase correlated. The magnitudes and the temperature dependence of both fluctuations are found to be sensitive to the junction resistance, which in turn is controllable by the process parameters during the barrier growth.

Keywords

1/f noise; barium compounds; critical current density (superconductivity); fluctuations in superconductors; high-temperature superconductors; superconductive tunnelling; yttrium compounds; 1/f noise; YBa₂Cu₃O_x; barrier growth; critical current; current-voltage characteristics; high temperature superconductor; interface-engineered barrier; noise properties; ramp-edge junction; resistance fluctuations; transport; typical resistively-shunted junction like behavior; Acoustical engineering; Critical current; Current-voltage characteristics; Fluctuations; Noise measurement; Process control; Temperature control; Temperature dependence; Temperature sensors; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2003.812536

Filename

1212441