Title :
High peak-to-valley current ratio In0.22Ga0.78As/AlAs RTDs on GaAs using relaxed In xGa1-x buffers
Author :
Aggarwal, R.J. ; Fonstad, C.G., Jr.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fDate :
1/5/1995 12:00:00 AM
Abstract :
The authors have grown In0.22Ga0.78As/AlAs resonant tunnelling diodes (RTDs) on relaxed InxGa1-x As buffers on GaAs substrates, which show the largest peak-to-valley current ratio (PVCR), 13:1, ever reported for GaAs-based RTDs. X-ray diffraction and photoluminescence (PL) studies confirm the composition and relaxation of the buffers. The intrinsic device performance is excellent despite the presence of some dislocations in the active layers. However, it appears that the relaxed buffers do add series resistance to the intrinsic device
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; InGaAs-AlAs; RTDs; X-ray diffraction studies; dislocations; peak-to-valley current ratio; photoluminescence studies; relaxed buffers; resonant tunnelling diodes; series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950002
