DocumentCode :
1243034
Title :
Carrier trapping in inter-polysilicon charge injectors
Author :
Brown, D.R. ; Collins, S. ; Marshall, G.F.
Author_Institution :
Defence Res. Agency, Malvern, UK
Volume :
31
Issue :
1
fYear :
1995
fDate :
1/5/1995 12:00:00 AM
Firstpage :
72
Lastpage :
73
Abstract :
The authors report the observation of trapping and aging effects in charge injection schemes for floating-gate devices. The observations indicate that these polysilicon charge injectors must be used in conjunction with a programming technique which includes feedback. A suitable scheme is chip-in-the-loop training
Keywords :
ageing; charge-coupled devices; electron traps; elemental semiconductors; feedback; silicon; Si; aging; carrier trapping; chip-in-the-loop training; feedback; floating-gate devices; inter-polysilicon charge injectors; programming;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950032
Filename :
364305
Link To Document :
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