Title :
Carrier trapping in inter-polysilicon charge injectors
Author :
Brown, D.R. ; Collins, S. ; Marshall, G.F.
Author_Institution :
Defence Res. Agency, Malvern, UK
fDate :
1/5/1995 12:00:00 AM
Abstract :
The authors report the observation of trapping and aging effects in charge injection schemes for floating-gate devices. The observations indicate that these polysilicon charge injectors must be used in conjunction with a programming technique which includes feedback. A suitable scheme is chip-in-the-loop training
Keywords :
ageing; charge-coupled devices; electron traps; elemental semiconductors; feedback; silicon; Si; aging; carrier trapping; chip-in-the-loop training; feedback; floating-gate devices; inter-polysilicon charge injectors; programming;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950032