Title :
AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs
Author :
Fritz, I.J. ; Drummond, T.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
1/5/1995 12:00:00 AM
Abstract :
A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectance of over 90% has been realised, in agreement with a matrix-method computer simulation. Our results support the feasibility of vertical Fabry-Perot cavity optoelectronics using nitride materials
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; mirrors; optical fabrication; semiconductor epitaxial layers; semiconductor growth; (100) GaAs substrate; AlN-GaN; GaAs; gas-source MBE; matrix-method computer simulation; optical mirror structures; peak reflectance; quarter-wave reflector stack; vertical Fabry-Perot cavity optoelectronics; wurtzite structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950020
