Pseudomorphic AlInP/InP heterojunction bipolar transistors

Author

Hsin, Y.M. ; Ho, M.C. ; Mei, X.B. ; Liao, H.H. ; Chin, T.P. ; Tu, C.W. ; Asbeck, P.M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

31

Issue

2

fYear

1995

fDate

1/19/1995 12:00:00 AM

Firstpage

141

Lastpage

142

Abstract

Novel InP-based heterojunction bipolar transistors (HBTs) using an AlInP pseudomorphic emitter, together with an InP base and collector, have been fabricated. By using InP as both base and collector, the advantage of high electron velocity and high breakdown field of InP collectors are obtained without the problem associated with the energy barrier between the more standard InGaAs/InP base and collector heterojunction. Epitaxial layers were grown by gas-source molecular beam epitaxy (GSMBE). The 200 Å pseudomorphic emitter had an aluminium fraction of 15%, sufficiently suppressing hole injection from the base. The DC gain for 40×40 μm² devices reached 18. The breakdown voltage BV_CEO of 10 V is an improvement over devices with InGaAs base and collector layers

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; 10 V; AlInP pseudomorphic emitter; AlInP-InP; DC gain; GSMBE; InP base; InP collector; gas-source MBE; heterojunction bipolar transistors; high breakdown field; high electron velocity; hole injection suppression; molecular beam epitaxy; pseudomorphic HBT;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950084

Filename

364344