DocumentCode
1243257
Title
New mechanism of hot carrier generation in very short channel MOSFETs
Author
Childs, P.A. ; Leung, C C C
Author_Institution
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
Volume
31
Issue
2
fYear
1995
fDate
1/19/1995 12:00:00 AM
Firstpage
139
Lastpage
141
Abstract
Results are presented which suggest that as device dimensions are scaled down, hot carrier reliability problems may re-emerge despite reductions in supply voltage. This conclusion is drawn from theoretical results which show an increasingly important role played by electron-electron interactions as device dimensions are reduced
Keywords
MOSFET; hot carriers; semiconductor device reliability; device dimensions reduction; device scaling; electron-electron interactions; hot carrier generation; hot carrier reliability; very short channel MOSFETs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950091
Filename
364345
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