DocumentCode
1243263
Title
Control of Plasma Uniformity Using Phase Difference in a VHF Plasma Process Chamber
Author
Bera, Kallol ; Rauf, Shahid ; Collins, Ken
Author_Institution
Appl. Mater., Inc., Sunnyvale, CA
Volume
36
Issue
4
fYear
2008
Firstpage
1366
Lastpage
1367
Abstract
Very high frequency (VHF) capacitively coupled plasma sources are widely used for semiconductor manufacturing processes. Uniform plasma can be difficult to achieve at VHF for different load conditions (pressure, power, gas mixture electronegativity, etc.). This paper discusses how voltage phase difference between top and bottom electrodes can be used to control plasma uniformity above the wafer.
Keywords
electrodes; plasma density; plasma materials processing; plasma sources; VHF capacitively coupled plasma sources; VHF plasma process chamber; bottom electrodes; gas mixture electronegativity; plasma uniformity; semiconductor manufacturing process; top electrodes; voltage phase difference; Capacitively coupled; VHF Plasma; plasma density; plasma uniformity; power deposition; voltage phase difference;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2008.924413
Filename
4539637
Link To Document