DocumentCode :
1243263
Title :
Control of Plasma Uniformity Using Phase Difference in a VHF Plasma Process Chamber
Author :
Bera, Kallol ; Rauf, Shahid ; Collins, Ken
Author_Institution :
Appl. Mater., Inc., Sunnyvale, CA
Volume :
36
Issue :
4
fYear :
2008
Firstpage :
1366
Lastpage :
1367
Abstract :
Very high frequency (VHF) capacitively coupled plasma sources are widely used for semiconductor manufacturing processes. Uniform plasma can be difficult to achieve at VHF for different load conditions (pressure, power, gas mixture electronegativity, etc.). This paper discusses how voltage phase difference between top and bottom electrodes can be used to control plasma uniformity above the wafer.
Keywords :
electrodes; plasma density; plasma materials processing; plasma sources; VHF capacitively coupled plasma sources; VHF plasma process chamber; bottom electrodes; gas mixture electronegativity; plasma uniformity; semiconductor manufacturing process; top electrodes; voltage phase difference; Capacitively coupled; VHF Plasma; plasma density; plasma uniformity; power deposition; voltage phase difference;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2008.924413
Filename :
4539637
Link To Document :
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