Title :
Fabrication technique for Si single-electron transistor operating at room temperature
Author :
Takahashi, Y. ; Nagase, Masanori ; Namatsu, H. ; Kurihara, Keiichirou ; Nakajima, Yoshiki ; Horiguchi, Shogo ; Murase, K. ; Tabe, Michiharu
Author_Institution :
NTT LSI Labs., Kanagawa
fDate :
1/19/1995 12:00:00 AM
Abstract :
A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to ~2aF, which enabled conductance oscillation of the SET at room temperature
Keywords :
SIMOX; capacitance; elemental semiconductors; oxidation; semiconductor technology; silicon; single electron transistors; tunnelling; 2 aF; SET; SIMOX substrate; Si; Si island; capacitance reduction; conductance oscillation; fabrication technique; one-dimensional Si wire; pattern-dependent oxidation; room temperature operation; single-electron transistor; tunnelling barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950082
